- M. Ajmone Marsan, Torino Polytechnic, Italy
- H. Akhtar, AT&T, USA
- H. Akimaru, Asahi U., Japan
- M. Ammar. Georgia Tech, USA
- J. Ash, AT&T, USA
- K. Ben Letaief, U. Science & Technology, Hong Kong
- A, Bestavros, Boston U., USA
- R. Boutaba, Waterloo U., Canada
- S. Campos-Neto, Lockheed Martin, USA
- R. Chang, Polytechnic U., Hong Kong
- W. Dabbous, INRIA, France
- J. Diaz, La Plata U., Argentina
- M. T. El-Hadidi, Cairo U., Egypt
- K. Elsayed, Cairo U., Egypt
- J. Garcia-Haro, Polytech. Cartagena U., Spain
- A. J. Gonzalez V., U. Tec. Federico S.ta Maria, Chile
- H. Hassaneine, Queen's U., Canada
- A. Jajszczyk, Mining and Metallurgy U., Poland
- K. Jeffay, UNC, USA
- F. Kamoun, ENSI, Tunisia
- H. Koraitim, Thompson, France
- Y. Levy, AT&T, USA
- I. Matta, Boston U., USA
- A. Mehaoua, Versailles Saint-Quentin U., France
- M. Merabti, John Moores U., England
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- E. Modiano, MIT, USA
- H. Mouftah, Queens U., Canada
- H. Mueller, Siemens AG, Germany
- T. Nagase, Hirosaki U., Japan
- A. Pach, AGH Cracow U., Poland
- S. Papavasilliou, NJIT, USA
- J.-T. Park, Kyungpook U., Korea
- C. Perkins, Nokia, USA
- M. Pioro, Warsaw Tech. U., Poland
- A. Pitsillides, Cyprus U., Cyprus
- R. Popescu-Zeletin, GMD Fokus, Germany
- V. Prasad, Indian Institute of Science, India
- A. Puliafito, Messina U., Italy
- M. Reisslein, Arizona State U., USA
- G. Schaefer, Berlin Tech. U., Germany
- D. Serpanos, Patras U., Greece
- R. Steinmetz, Darmstadt U., Germany
- A. Tantawi, IBM, USA
- S. Tohme, ENST-Paris, France
- O. Tomarchio, Catania U., Italy
- V. Tsaoussidis, Northeastern
- U., USA M. Ulema, Mercury, USA
- J. E. Wieselthier, Naval Research Lab, USA
- L. Wolf, Karlsruhe U., Germany
- K. Young, Telcordia, USA
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